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Power management
Hall devices are solid-state electronic devices that utilize the Hall effect. Hall sensing circuits include four types: HALL, AMR, GMR, and TMR. The products include Hall switches, linear Hall circuit, magnetic encoders, 2D Hall switches, 3D Hall switches, etc.
Product series
Hall Switch chip
DC fan driven Hall chip
Bipolar latch type Hall chip
Micro power consumption type omnipolar Hall sensor
Micro power consumption unipolar Hall sensor
| 型号 | 工作电压 (V) |
驱动电流 (uA) |
输出方式 | 输出逻辑 | 感应方向 | 磁场特性（GS，25℃） | 工作温度 | 封装形式 | ||
| B_op | B_rp | B_hys | ||||||||
| TX3141 | 3.8-30 | 50 | NMOS输出 | L | Z轴 | -110 | -75 | 35 | -40～85 | SOT23-3L |
| TX3144 | 3.8-30 | 40 | NMOS输出 | L | Z轴 | +125 | +80 | 45 | -40～85 | SOT23-3L/TO-92S |
| TX5181 | 2.5-24 | 20 | NMOS输出 | L | Z轴 | +40 | +15 | 25 | -40～85 | SOT23-3L/TO-92S |
| 型号 | 工作电压 (V) |
输出电流 (mA) |
输出方式 | 输出逻辑 | 感应方向 | 磁场特性（GS，25℃） | 工作温度 | 封装形式 | ||
| B_op | B_rp | B_hys | ||||||||
| TX3277 | 3.5~20 | 300 | OD输出 | L | Z轴 | +35 | -35 | 70 | -40～85 | TO94 |
| TX3276 | 3.5~20 | 350 | OD输出 | L | Z轴 | +35 | -35 | 70 | -40～85 | TO94 |
| TX276A | 3.5~20 | 350 | OD输出 | L | Z轴 | +20 | -50 | 70 | -40～85 | TO94 |
| TX3278 | 3.5~20 | 350 | OD输出 | L | Z轴 | +20 | -50 | 70 | -40～85 | TO94 |
| TX477H | 3.5~24 | 300 | H桥输出 | L | Z轴 | +25 | -25 | 50 | -40～85 | TO94 |
| TX2987 | 3.5~24 | 350 | H桥输出 | L | Z轴 | +30 | -30 | 60 | -40～85 | TO94 |
| 型号 | 工作电压 (V) |
平均电流 (mA) |
输出方式 | 输出逻辑 | 感应方向 | 磁场特性（GS，25℃） | 工作温度 | 封装形式 | ||
| B_op | B_rp | B_hys | ||||||||
| TX412 | 3.8-35 | 50 | NMOS输出 | L | Z轴 | +45 | -45 | 90 | -40～125 | SOT23-3L |
| TX141F | 3.8-35 | 50 | NMOS输出 | L | Z轴 | +45 | -45 | 90 | -40～125 | TO-92S |
| TX1661H | 3.8-80 | 30 | NMOS输出 | L | Z轴 | +50 | -50 | 100 | -40～150 | TO-92S |
| TX1671 | 3.8-80 | 30 | NMOS输出 | L | Z轴 | +55 | -55 | 110 | -40～150 | TO-92S |
| TX1672 | 3.8-80 | 30 | NMOS输出 | L | Z轴 | +45 | -45 | 90 | -40～150 | TO-92S |
| TX5180 | 2.5-24 | 20 | NMOS输出 | L | Z轴 | +20 | -20 | 40 | -40～85 | SOT23-3L/TO-92S |
| 型号 | 工作电压 (V) |
静态电流 (uA) |
输出方式 | 输出逻辑 | 感应方向 | 磁场特性（GS，25℃） | 工作温度 | 封装形式 | ||
| B_op | B_rp | B_hys | ||||||||
| TX212 | 2.0-5.5 | 7@Vcc=3.6V | NMOS开漏输出 | L | Z轴 | ±35 | ±25 | 10 | -40～85 | SOT23-3L |
| TX4913 | 2.0-6.0 | 7@Vcc=3.6V | NMOS开漏输出 | L | Z轴 | ±35 | ±25 | 10 | -40～85 | TO92S |
| TX213 | 1.8-5.5 | 7@Vcc=3.6V | CMOS/NMOS输出 | L | Z轴 | ±30 | ±20 | 10 | -40～85 | SOT23-3L |
| TX215 | 1.8-5.5 | 27@Vcc=3.6V | CMOS/NMOS输出 | L | Z轴 | ±30 | ±20 | 10 | -40～85 | SOT23/SOT23-3L |
| TX217 | 1.8-5.5 | 7@Vcc=3.6V | CMOS/NMOS输出 | L | Z轴 | ±27 | ±17 | 10 | -40～85 | SOT23/SOT23-3L |
| 型号 | 工作电压 (V) |
静态电流 (uA) |
输出方式 | 输出逻辑 | 感应方向 | 磁场特性（GS，25℃） | 工作温度 | 封装形式 | ||
| B_op | B_rp | B_hys | ||||||||
| TX254 | 2.0-5.5 | 7@Vcc=3.6V | NMOS输出 | L | Z轴 | +35 | +25 | 10 | -40～85 | SOT23-3L/TO-92S/SOT553 |
| TX216 | 1.8-5.5 | 3.5@Vcc=3.6V | CMOS/NMOS输出 | L | Z轴 | +30 | +20 | 10 | -40～85 | SOT23-3L/TO92S |
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